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Imaging in-plane 90° magnetization switching in a (Ga,Mn)As epitaxial layer

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Palestine Technical College
Al-Qadi B.; Sakatoku Y.; Nishizawa N.; Munekata H.
Al-Qadi, B. (35232487000); Sakatoku, Y. (57500465200); Nishizawa, N. (9237018400); Munekata, H. (7005645634)
35232487000; 57500465200; 9237018400; 7005645634
2018
Journal of Applied Physics
Imaging in-plane 90° magnetization switching in a (Ga,Mn)As epitaxial layer
124
6
American Institute of Physics Inc.
63901
Department of Electrical Engineering, College of Engineering and Technology, Palestine Technical University Kadoorie, P.O. Box: 7, Yafa Street, Tulkarm, Palestine; Laboratory for Future Interdisciplinary Research Science and Technology, Tokyo Institute of Technology, 4259-J3-15 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan
Al-Qadi B., Department of Electrical Engineering, College of Engineering and Technology, Palestine Technical University Kadoorie, P.O. Box: 7, Yafa Street, Tulkarm, Palestine; Sakatoku Y., Laboratory for Future Interdisciplinary Research Science and Technology, Tokyo Institute of Technology, 4259-J3-15 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan; Nishizawa N., Laboratory for Future Interdisciplinary Research Science and Technology, Tokyo Institute of Technology, 4259-J3-15 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan; Munekata H., Laboratory for Future Interdisciplinary Research Science and Technology, Tokyo Institute of Technology, 4259-J3-15 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan
0
10.1063/1.5040129
Domain walls; Epitaxial growth; Image enhancement; Magnetic domains; Magnetization; Nucleation; Optical data processing; Spin dynamics; Temperature; Domain wall motion; High-temperature regime; Low-temperature regime; Magnetic birefringence; Magnetization switching; Temperature regimes; Thermally activated; Uniaxial anisotropy; Switching