Electronic structure of modulation-doped heterostructures: Electric field effects

field_of_study

Blank

university

Al-Quds Open University

authors

Ilaiwi K.F.; El-Kawni M.I.; Tomak M.

authors_full_names

Ilaiwi, K.F. (6603437094); El-Kawni, M.I. (6603036304); Tomak, M. (7004930120)

authors_id

6603437094; 6603036304; 7004930120

year

1998

source_title

Superlattices and Microstructures

article_title

Electronic structure of modulation-doped heterostructures: Electric field effects

volume

24

issue

1

page_start

61

page_end

67

publisher

Academic Press

affiliations

Department of Science, Philadelphia University, Sweileh, PO Box 1101, Jordan; Department of Science, Al-quds Open University, West Bank, Nablus, Israel; Department of Physics, Middle East Technical University, Ankara, 06531, Turkey

authors_with_affiliations

Ilaiwi K.F., Department of Science, Philadelphia University, Sweileh, PO Box 1101, Jordan; El-Kawni M.I., Department of Science, Al-quds Open University, West Bank, Nablus, Israel; Tomak M., Department of Physics, Middle East Technical University, Ankara, 06531, Turkey

cited_by

3

doi

10.1006/spmi.1996.0443

author_keywords

GaAs/Ga<sub>1-x</sub>Al<sub>x</sub>As; Heterostructures; Polarization

index_keywords

Carrier concentration; Electric field effects; Electron energy levels; Electronic structure; Functions; Polarization; Semiconducting gallium arsenide; Semiconductor doping; Wavefunction; Heterojunctions