Effect of annealing on electrical, structural, and optical properties of sol-gel ITO thin films

field_of_study

Blank

university

Al-Azhar University – Gaza

authors

Hammad T.M.

authors_full_names

Hammad, Talaat Moussa (56366992900)

authors_id

56366992900

year

2009

source_title

Physica Status Solidi (A) Applications and Materials Science

article_title

Effect of annealing on electrical, structural, and optical properties of sol-gel ITO thin films

volume

206

issue

9

page_start

2128

page_end

2132

affiliations

Department of Chemistry and Biochemistry, Brigham Young University, Provo, UT 84602, United States; Department of Physics, Al-Azhar University-Gaza, Gaza, Palestine

authors_with_affiliations

Hammad T.M., Department of Chemistry and Biochemistry, Brigham Young University, Provo, UT 84602, United States, Department of Physics, Al-Azhar University-Gaza, Gaza, Palestine

corresponding_author

T. M. Hammad; Department of Chemistry and Biochemistry, Brigham Young University, Provo, UT 84602, United States; email: talaath55@yahoo.com

cited_by

42

doi

10.1002/pssa.200881781

index_keywords

Annealing; Coatings; Electric conductivity; Gelation; Gels; Optical properties; Sol-gel process; Sol-gels; Sols; Surface roughness; Surface structure; Thin films; Tin; Tin oxides; Annealing temperatures; Crystalline films; Direct band gap; Electrical performance; Electrical resistivity; Glass substrates; Indium tin oxide thin films; ITO thin films; Order of magnitude; Preferential orientation; Sol gel dip coating; Temperature range; Visible range; Oxide films