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Magnetic-field dependence of microwave properties of ramp-type Josephson junctions with PrBa2Cu3O7 barriers

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Al-Azhar University – Gaza
Sakeek H.F.; Daum T.; Scharnweber R.; Schilling M.
Sakeek, H.F. (6507130585); Daum, T. (11044514700); Scharnweber, R. (6601996373); Schilling, M. (57204743825)
6507130585; 11044514700; 6601996373; 57204743825
1996
Physica C: Superconductivity and its Applications
Magnetic-field dependence of microwave properties of ramp-type Josephson junctions with PrBa2Cu3O7 barriers
258
2-Jan
1
8
Elsevier
Universität Hamburg, Inst. Angew. Physik Zentrum M., 20355 Hamburg, Jungiusstraße 11, Germany; Al-Azhar University of Gaza, Department of Physics, Gaza, PO. Box 1277, Israel
Sakeek H.F., Al-Azhar University of Gaza, Department of Physics, Gaza, PO. Box 1277, Israel; Daum T., Universität Hamburg, Inst. Angew. Physik Zentrum M., 20355 Hamburg, Jungiusstraße 11, Germany; Scharnweber R., Universität Hamburg, Inst. Angew. Physik Zentrum M., 20355 Hamburg, Jungiusstraße 11, Germany; Schilling M., Universität Hamburg, Inst. Angew. Physik Zentrum M., 20355 Hamburg, Jungiusstraße 11, Germany
T. Daum; Universität Hamburg, Inst. Angew. Physik Zentrum M., 20355 Hamburg, Jungiusstraße 11, Germany; email: daum@physnet.uni-hamburg.de
6
10.1016/0921-4534(95)00795-4
Critical currents; Current voltage characteristics; Etching; Geometry; High temperature superconductors; Magnetic field effects; Mathematical models; Microwaves; Photolithography; Praseodymium compounds; Superconducting films; Thermal noise; Argon ion etching; Half integral constant voltage steps; Laser deposited films; Magnetic field dependence; Praseodymium barium cuprates; Ramp type geometry; Resistively shunted junction model; Shapiro steps; Josephson junction devices